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International Electron Devices Meeting, 1996: San Francisco, Ca December 8-11, 1996 Technical Digest (International Electron Devices Meeting//Technical Digest) by International Electron Devices Meeting

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Published by Institute of Electrical & Electronics Enginee .
Written in English


  • Electronic devices & materials,
  • Electronic Apparatus And Devices,
  • Technology & Engineering,
  • Technology & Industrial Arts,
  • Science/Mathematics,
  • Electronics - General

Book details:

The Physical Object
Number of Pages960
ID Numbers
Open LibraryOL10998965M
ISBN 100780333934
ISBN 109780780333932

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Vertical device structures consist of GaN layers of diverse doping levels. Hence, it is of crucial importance to measure and understand how the dopant type (Si, Fe, and Mg), doping level, and crystal quality alter the thermal conductivity of HVPE-grown bulk : Yiwen Song, James Spencer Lundh, Weijie Wang, Jacob H. Leach, Devon Eichfeld, Anusha Krishnan, Carlo.   Based on the above equations and experimental data, the device parameters for the pentacene TFTs have been extracted, resulting in saturation hole mobility of cm 2 /V s, threshold voltage of − V, subthreshold slope of V/decade, and on/off ratio of 10 5 for the device with lower deposition rate ().For the pentacene TFTs at the higher deposition rate, hole mobility is cm 2 /V Cited by:   This article reviews the history and current progress in high-mobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We start by providing a chronological overview of important milestones and discoveries that have allowed heterostructures grown on Si substrates to transition from purely academic research in the ’s and ’s to the Cited by: Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University, , Aoba Aramaki, Aobaku, Sendai, Miyagi , Japan.

This device makes possible a paradigm-shifting transceiver architec- the scanning electron micrograph (SEM) of a two-resonator (i.e., two-pole) VHF version of this micromechanical filter achieved using San Francisco, California, December , , pp.   Burghartz JN, Edelstein DC, Jenkins KA, Jahnes C, Uzoh C, O’Sullivan EJ, Chan KK, Soyuer M, Roper P, Cordes S: International Electron Devices Meeting: December 8–11 ; San Francisco. In Monolithic spiral inductors fabricated using a VLSI Cu-damascene interconnect technology and low-loss substrates. New York: IEEE; – Sunderarajan S. Mohan, C. Patrick Yue, Maria del Mar Hershenson, S. Simon Wong and Thomas H. Lee, "Modeling and Characterization of On-Chip Transformers," IEEE International Electron Devices Meeting (IEDM), December , [Paper, Slides]. The development of high-performance p-type oxides with high hole mobility and a wide bandgap is critical for the applications of metal oxide semiconductors in vertically integrated CMOS devices [Salahuddin et al., Nat. Electron.1, ()].Sn 2+-based oxides such as SnO and K 2 Sn 2 O 3 have recently been proposed as high-mobility p-type oxides due to their relatively low effective hole.

Articles. Hu, R.S. Muller, “A Resistive-Gated IGFET Tetrode,” IEEE Trans. on Electron Devices, Vol. ED, July , pp. M. Chang, C. Hu, J.R. Whinnery. Shin and Y.-S. Kwon, “Influence of substrate misorientation on facet formation in selective area metalorganic chemical vapor deposition,” in Proc. Materials Research Society Fall Meeting (MRS), Boston MA, Dec. , pp 1. H. Shin, J.-H. Son and Y.-S. Kwon, “A New GaAs BiFET Structure using Selective MOCVD Technique,”.   Wen et al., Proceedings of the IEEE International Interconnect Technology Conference, San Jose, CA, 23–26 May (IEEE, New York, ), p. Google Scholar. International Conference program Committees. European Chair and Member of the VLSI Technology Symposium(from to ). Member of the and , and International Electron Devices Meeting (IEDM) program committtee. Member of the ESSDERC program committee since and Responsible for the ESSDERC Tutorials.